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GAN080-650EBEZ - Nexperia

Description: N-Channel 650 V 29A (Ta) 240W (Ta) Surface Mount, Wettable Flank DFN8080-8

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GAN080-650EBEZ - Nexperia - PCB symbol
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GAN080-650EBEZ - Nexperia PCB footprint - Other - Other - GAN080-650EBEZ-4
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GAN080-650EBEZ - Nexperia - 3D model - Other - GAN080-650EBEZ-4
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GAN080-650EBEZ Details

  • Manufacturer Part Number:

    GAN080-650EBEZ

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    COMPATIBLE MO-229, SOT-8074-1, DFN8080-8, 8 PIN

  • Manufacturer Package Code:

    SOT8074-1

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    7

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.5 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    58 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GAN080-650EBEZ Frequently Asked Questions (FAQs)

  • Nexperia provides a recommended PCB layout in their application note AN11542, which includes guidelines for thermal vias, copper thickness, and pad sizes to ensure optimal thermal performance.
  • Nexperia recommends using a gate driver with a high current capability (>1A) and a low output impedance to ensure fast switching times and minimal ringing. The driver should also be able to handle the FET's high gate-source voltage (up to 6V).
  • The maximum allowed junction temperature (Tj) for the GAN080-650EBEZ is 150°C, as specified in the datasheet. Exceeding this temperature can lead to reduced reliability and lifespan.
  • To ensure safe operation during startup and shutdown, Nexperia recommends implementing a soft-start circuit to limit the inrush current and voltage overshoots. Additionally, a shutdown circuit can be used to slowly discharge the gate-source voltage to prevent unwanted turn-on.
  • The GAN080-650EBEZ has an ESD rating of HBM 2kV and CDM 1kV. To ensure ESD protection, Nexperia recommends using ESD protection devices, such as TVS diodes, and following proper handling and assembly procedures.

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GAN080-650EBEZ Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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