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GAP3SLT33-214 - GeneSiC Semiconductor

Description: Schottky Diodes & Rectifiers 3300V - 0.3 A SiC Schottky Rectifier

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GAP3SLT33-214 - GeneSiC Semiconductor PCB footprint - Diodes Moulded - Diodes Moulded - DO-214
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3D Models
GAP3SLT33-214 - GeneSiC Semiconductor  - 3D model - Diodes Moulded - DO-214
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GAP3SLT33-214 Details

  • Manufacturer Part Number:

    GAP3SLT33-214

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-214

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.2 V

  • JEDEC-95 Code:

    DO-214

  • JESD-30 Code:

    R-PDSO-C2

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    105 W

  • Rep Pk Reverse Voltage-Max:

    3300 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

GAP3SLT33-214 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Use a heat sink or thermal pad to maintain a low junction temperature, and avoid overheating the device.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the exact values may vary depending on the specific application and circuit design.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • A dead time of 10-50ns is recommended to minimize shoot-through current. However, the exact value may vary depending on the specific application and circuit design.

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GAP3SLT33-214 Overview

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