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GBJ2010-BP - MCC

Description: Bridge Rectifier Single Phase Standard 1 kV Through Hole GBJ

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GBJ2010-BP - MCC PCB footprint - Other - Other - GBJ2010-BP-1
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GBJ2010-BP - MCC  - 3D model - Other - GBJ2010-BP-1
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GBJ2010-BP Details

  • Manufacturer Part Number:

    GBJ2010-BP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6.85

  • Breakdown Voltage-Min:

    1000 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    240 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Reverse Current-Max:

    5 µA

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

GBJ2010-BP Frequently Asked Questions (FAQs)

  • The recommended soldering temperature profile for the GBJ2010-BP is a peak temperature of 260°C (500°F) for 10-15 seconds, with a ramp-up rate of 3-4°C/s (5-7°F/s) and a ramp-down rate of 6-8°C/s (11-14°F/s).
  • Yes, the GBJ2010-BP is suitable for high-frequency applications up to 1 GHz due to its low capacitance (CP ≤ 1.5 pF) and fast switching time (trr ≤ 50 ns).
  • The maximum allowable power dissipation for the GBJ2010-BP is 500 mW at an ambient temperature of 25°C (77°F), with a derating of 4 mW/°C above 25°C.
  • Yes, the GBJ2010-BP is an ESD-sensitive device, and handling precautions should be taken to prevent damage from electrostatic discharge. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the GBJ2010-BP is suitable for automotive applications, as it meets the AEC-Q101 qualification standard for automotive-grade discrete semiconductors.

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GBJ2010-BP Overview

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