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GBJ2510-G - Comchip Technology

Description: Bridge Rectifiers DIODE RECT BRIDGE GPP 25A 1000V

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GBJ2510-G - Comchip Technology PCB footprint - Other - Other - GBJ2510-G-1
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GBJ2510-G - Comchip Technology  - 3D model - Other - GBJ2510-G-1
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GBJ2510-G Details

  • Manufacturer Part Number:

    GBJ2510-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Comchip Technology Corporation Ltd

  • YTEOL:

    3

  • Breakdown Voltage-Min:

    1000 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    25 A

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

GBJ2510-G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad or a copper pour under the device, and to ensure good thermal conduction to the surrounding copper areas. Additionally, keeping the PCB layer stack-up symmetrical and using thermal vias can help to reduce thermal resistance.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a small amount of solder paste or flux to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device, and avoid applying excessive pressure or vibration during the soldering process.
  • Store the GBJ2510-G in a dry, cool place away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the leads or pins to prevent electrostatic discharge (ESD) damage. Use anti-static packaging and follow standard ESD handling procedures when handling the devices.
  • While the GBJ2510-G is primarily designed for low-frequency applications, it can be used in high-frequency applications up to a certain extent. However, the device's performance may degrade at high frequencies due to increased switching losses and reduced efficiency. It's recommended to consult with the manufacturer or a qualified engineer to determine the suitability of the GBJ2510-G for a specific high-frequency application.
  • To protect the GBJ2510-G from overvoltage and overcurrent conditions, use a suitable voltage regulator or overvoltage protection circuit, and consider adding a fuse or current-limiting resistor in series with the device. Additionally, ensure that the device is operated within its recommended voltage and current ratings, and provide adequate heat sinking to prevent overheating.

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GBJ2510-G Overview

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