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GBU801 - Taiwan Semiconductor

Description: TAIWAN SEMICONDUCTOR - GBU801 - BRIDGE RECTIFIER, 8A, 50V

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PCB Footprints
GBU801 - Taiwan Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - GBU_2
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3D Models
GBU801 - Taiwan Semiconductor  - 3D model - Transistor Outline, Vertical - GBU_2
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GBU801 Details

  • Manufacturer Part Number:

    GBU801

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    6.85

  • Case Connection:

    ISOLATED

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    50 V

  • Reverse Current-Max:

    5 µA

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GBU801 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern around the pad are suggested. Additionally, a solid ground plane on the bottom layer can help to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Also, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Additionally, follow proper handling and storage procedures to minimize the risk of ESD damage.
  • Yes, the GBU801 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the package parasitics, PCB layout, and component selection to minimize signal degradation and ensure optimal performance.
  • The recommended soldering process for the GBU801 is a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30-60 seconds. It's essential to follow the recommended soldering profile to prevent damage to the device.

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GBU801 Overview

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