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GC50MPS06-247 - GeneSiC Semiconductor

Description: 650V 50A SiC Schottky MPS Diode

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PCB Footprints
GC50MPS06-247 - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-2L
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3D Models
GC50MPS06-247 - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247-2L
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GC50MPS06-247 Details

  • Manufacturer Part Number:

    GC50MPS06-247

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    400 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    86 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    454 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    5 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GC50MPS06-247 Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer for heat dissipation. A minimum of 1 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) of 150°C. Also, follow the recommended derating curves for current and voltage.
  • GeneSic recommends a gate drive voltage of 15V to 20V and a current of 1A to 2A for optimal switching performance. However, the specific requirements may vary depending on the application and circuit design.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage from voltage and current surges. GeneSic recommends using a TVS diode and a fuse or a current sense resistor for OVP and OCP, respectively.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or pins to prevent electrostatic discharge (ESD) damage.

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GC50MPS06-247 Overview

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