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GD2X30MPS06D - GeneSiC Semiconductor

Description: Schottky Diodes & Rectifiers 650V 60A TO-247-3 SiC Schottky MPS

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PCB Footprints
GD2X30MPS06D - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
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3D Models
GD2X30MPS06D - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247-3
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GD2X30MPS06D Details

  • Manufacturer Part Number:

    GD2X30MPS06D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Non-rep Pk Forward Current-Max:

    210 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    44 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    404 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GD2X30MPS06D Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer for heat dissipation. A minimum of 1 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow GeneSic's recommended thermal design guidelines. Also, consider derating the device's current rating at high temperatures.
  • GeneSic recommends limiting voltage transients to ±50 V/ns to prevent damage to the device. Exceeding this limit may cause device failure or degradation.
  • Yes, but ensure that the devices are matched for gate threshold voltage and on-resistance. Also, follow GeneSic's guidelines for paralleling MOSFETs to avoid uneven current distribution and thermal issues.
  • GeneSic recommends a gate drive voltage of 10-15 V and a current of 1-2 A for optimal switching performance. However, the specific requirements may vary depending on the application and PCB layout.

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GD2X30MPS06D Overview

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