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GD30MPS06H - GeneSiC Semiconductor

Description: GENESIC SEMICONDUCTOR - GD30MPS06H - Silicon Carbide Schottky Diode, MPS Gen IV, Single, 650 V, 49 A, 46 nC, TO-247

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PCB Footprints
GD30MPS06H - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-2L
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3D Models
GD30MPS06H - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247-2L
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GD30MPS06H Details

  • Manufacturer Part Number:

    GD30MPS06H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    210 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    49 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    237 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    5 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GD30MPS06H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thick copper layer (at least 2 oz) with a large thermal pad connected to a heat sink or a thermal via array. This helps to dissipate heat efficiently and reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities. Additionally, ensure that the device is properly soldered and the PCB is designed to withstand thermal stresses.
  • The recommended gate drive circuits for the GD30MPS06H involve using a high-current, low-impedance gate driver with a dedicated power supply. The gate driver should be capable of providing a peak current of at least 1 A and a voltage swing of 10-15 V to ensure reliable switching.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. Additionally, consider using a fuse or a current-limiting resistor in series with the device to prevent damage from excessive current.
  • The recommended ESD protection measures for the GD30MPS06H involve using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and incorporating ESD protection circuits (such as TVS diodes or ESD protection arrays) on the PCB to prevent damage from electrostatic discharge.

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