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GD30MPS12H - GeneSiC Semiconductor

Description: Schottky Diodes & Rectifiers 1200V 30A TO-247-2 SiC Schottky MPS

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PCB Footprints
GD30MPS12H - GeneSiC Semiconductor PCB footprint - Other - Other - TO-247-2_2022
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3D Models
GD30MPS12H - GeneSiC Semiconductor  - 3D model - Other - TO-247-2_2022
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GD30MPS12H Details

  • Manufacturer Part Number:

    GD30MPS12H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    240 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    55 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    313 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GD30MPS12H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thick copper layer (at least 2 oz) with a large thermal pad connected to a heat sink or a thermal via array. This helps to dissipate heat efficiently and reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and case temperature (Tc). Additionally, consider using a heat sink or thermal management system to keep the device within the specified temperature range.
  • The recommended gate drive circuits for the GD30MPS12H involve using a gate driver IC with a high current capability (e.g., 2A-5A) and a low output impedance. The gate driver should be able to provide a fast rise and fall time (typically <10ns) to minimize switching losses.
  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended ESD protection measures for the GD30MPS12H involve using ESD protection diodes or devices at the input and output pins, as well as following proper handling and storage procedures to prevent electrostatic discharge damage.

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