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GE10MPS06Q - GeneSiC Semiconductor

Description: SiC Schottky Diodes 650V 10A PQFN 8x8 SiC Schottky MPS, -55°C to +175°C

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PCB Footprints
GE10MPS06Q - GeneSiC Semiconductor PCB footprint - Other - Other - QFN8x8_2026
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3D Models
GE10MPS06Q - GeneSiC Semiconductor  - 3D model - Other - QFN8x8_2026
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GE10MPS06Q Details

  • Manufacturer Part Number:

    GE10MPS06Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    QFN-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Additional Feature:

    PD-CASE

  • Application:

    FAST RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.5 V

  • JESD-30 Code:

    S-PDSO-N8

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    25 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    162 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    3 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

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GE10MPS06Q Overview

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