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GS-065-030-2-L-MR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor, 8x8 PDFN, Bottom-side cooled

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GS-065-030-2-L-MR - GaN Systems PCB footprint - Other - Other - GS-065-030-2-L-MR
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GS-065-030-2-L-MR Details

  • Manufacturer Part Number:

    GS-065-030-2-L-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    DFN-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.6 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS-065-030-2-L-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal management guidelines in their application notes. It's recommended to follow these guidelines to ensure optimal performance and thermal management.
  • Ensure proper thermal management by using a heat sink, thermal interface material, and a cooling system. Monitor the device's temperature and adjust the cooling system accordingly. Also, follow the recommended operating conditions and derating guidelines.
  • Handle the device with ESD-protective equipment and follow standard ESD handling precautions. The device has built-in ESD protection, but it's still important to follow proper handling and storage procedures to prevent damage.
  • Yes, the GS-065-030-2-L-MR can be used in a half-bridge configuration. However, ensure proper dead-time management, and consider the device's switching characteristics, gate drive requirements, and thermal management.
  • The recommended gate drive voltage is +5V to +10V, and the current requirement is dependent on the specific application and switching frequency. GaN Systems provides guidelines for gate drive design in their application notes.

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GS-065-030-2-L-MR Overview

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