Please enter a minimum 3 letters or numbers
Technical Content
Part Image

GS61004B-MR - GaN Systems

Description: 100V, 38A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled

Download GS61004B-MR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
GS61004B-MR - GaN Systems - PCB symbol
click to zoom
PCB Footprints
GS61004B-MR - GaN Systems PCB footprint - Other - Other - GS61004B-MR
click to zoom
3D Models
GS61004B-MR - GaN Systems - 3D model - Other - GS61004B-MR
click to zoom

GS61004B-MR Details

  • Manufacturer Part Number:

    GS61004B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    45 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

GS61004B-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design and layout guidelines in their application notes and evaluation boards. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Monitor the device's junction temperature (TJ) and ensure it stays within the recommended operating range. Implement a thermal management strategy, such as a heat sink or fan, and ensure good airflow around the device.
  • The recommended gate drive voltage is ±15V, and the current limit is 1A. However, it's essential to consult the datasheet and application notes for specific guidelines on gate drive requirements.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. GaN Systems also recommends using a gate driver with built-in protection features, such as the UCC27531.
  • The recommended dead time is 10-20 ns, depending on the specific application and switching frequency. Insufficient dead time can lead to shoot-through currents, while excessive dead time can reduce efficiency.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

GS61004B-MR Overview

Use the download button to access the GS61004B-MR schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like GS610, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for GS61004B-MR, you might also be interested in these parts:
Part Number
GS61004B-TR
1-174957-1
179254-2
282770-1
USB-AM-S-F-B-TH
LQH5BPN100MT0L
MT40A512M16LY-062E IT:E TR
NX2012SA-32.768K-STD-MUB-1
MC3486N

Parts related to GS61004B-MR

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑