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GS61008P-MR - GaN Systems

Description: 100V, 90A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled

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GS61008P-MR - GaN Systems PCB footprint - Other - Other - GS61008P-MR
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GS61008P-MR - GaN Systems  - 3D model - Other - GS61008P-MR
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GS61008P-MR Details

  • Manufacturer Part Number:

    GS61008P-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008P-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design and layout guidelines in their application notes and evaluation boards. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Ensure proper thermal management by providing adequate heat sinking, using a thermal interface material, and keeping the device within the recommended operating temperature range. Also, follow the recommended current sensing and overcurrent protection guidelines.
  • GaN Systems provides recommended gate drive circuits and layout considerations in their application notes. It's essential to follow these guidelines to ensure proper switching performance and minimize ringing and oscillations.
  • GaN Systems provides application notes and design guides for specific applications. It's recommended to consult these resources and follow the recommended design guidelines to optimize the device for the specific application.
  • The GS61008P-MR has undergone rigorous reliability and qualification tests, including JEDEC and AEC-Q101 standards. GaN Systems provides detailed information on the testing and qualification process in their documentation.

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GS61008P-MR Overview

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