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GS61008P-MR - Infineon

Description: Bottom-side cooled 100 V E-mode GaN transistor 90A GaN FETs LEGACY GAN SYSTEMS -55C+ 150C

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PCB Footprints
GS61008P-MR - Infineon PCB footprint - Other - Other - ULGA-5
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3D Models
GS61008P-MR - Infineon  - 3D model - Other - ULGA-5
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GS61008P-MR Details

  • Manufacturer Part Number:

    GS61008P-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-XUUC-N4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    UNCASED CHIP

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008P-MR Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable thermal interface material, and consider using a heat sink or thermal management system. Additionally, consult Infineon's application notes and thermal modeling tools to simulate and optimize thermal performance.
  • Using a different gate driver IC than the recommended ones may affect the performance, reliability, and compatibility of the GS61008P-MR. It's essential to ensure the gate driver IC meets the recommended specifications, such as voltage and current ratings, to avoid potential issues like shoot-through, oscillations, or reduced lifespan.
  • Yes, the GS61008P-MR can be used in a half-bridge configuration. However, it's crucial to follow the recommended design guidelines, ensure proper dead-time management, and consider the impact on thermal performance and electromagnetic compatibility (EMC). Consult Infineon's application notes and design guides for more information.
  • To troubleshoot and debug issues with the GS61008P-MR, follow a systematic approach: 1) consult the datasheet and application notes, 2) verify the PCB layout and assembly, 3) check the power supply and voltage rails, 4) use oscilloscopes and logic analyzers to monitor signals, and 5) consult Infineon's technical support resources and forums for guidance and expertise.

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