Part Image

GS61008P-TR - Infineon

Description: GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled

Download GS61008P-TR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
GS61008P-TR - Infineon PCB footprint - Other - Other - GS61008P-TR-3
click to zoom
3D Models
GS61008P-TR - Infineon  - 3D model - Other - GS61008P-TR-3
click to zoom

GS61008P-TR Details

  • Manufacturer Part Number:

    GS61008P-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-XUUC-N4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    UNCASED CHIP

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008P-TR Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable thermal interface material, and consider using a heat sink or thermal management system. Additionally, ensure that the device is properly soldered and that the PCB is designed to minimize thermal stress.
  • While the GS61008P-TR is available in a TSSOP package, using a different package type like QFN may affect the thermal performance, pinout, and PCB layout. Consult Infineon's documentation and application notes for specific guidance on package-specific design considerations.
  • Infineon recommends following standard ESD protection guidelines, such as using ESD-sensitive handling procedures, implementing ESD protection circuits, and using ESD-protected devices in the surrounding circuitry. Additionally, consider using a TVS (Transient Voltage Suppressor) diode or other ESD protection devices to safeguard the GS61008P-TR.
  • For high-reliability or safety-critical applications, consult Infineon's documentation on the device's reliability and failure rates. Additionally, consider implementing redundant systems, error detection and correction mechanisms, and fail-safe designs to ensure the overall system's reliability and safety.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

GS61008P-TR Overview

Use the download button to access the GS61008P-TR schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like GS610, or try a keyword search, such as RF Power Field-Effect Transistors

Parts related to GS61008P-TR

Showing 0 results