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GS61008T-MR - GaN Systems

Description: 100V, 90A, Enhancement mode GaN Transistor, GaNPX® package, Top-side cooled

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GS61008T-MR - GaN Systems PCB footprint - Other - Other - GS61008T-MR
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GS61008T-MR - GaN Systems  - 3D model - Other - GS61008T-MR
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GS61008T-MR Details

  • Manufacturer Part Number:

    GS61008T-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008T-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal design guidelines in their application notes and design resources. It's recommended to follow these guidelines to ensure optimal performance and thermal management.
  • Ensure proper thermal design, use a heat sink, and implement a thermal monitoring and protection system. Also, follow the recommended operating conditions, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • GaN Systems provides EMI and RFI guidelines in their application notes. It's recommended to follow these guidelines, use proper shielding, and implement EMI filters to minimize electromagnetic interference and radio-frequency interference.
  • Optimize the gate drive circuit by selecting the appropriate gate resistor and capacitor values, and ensuring a low inductance layout. GaN Systems provides guidelines for gate drive circuit design in their application notes.
  • GaN Systems provides reliability and lifetime data in their datasheet and application notes. The GS61008T-MR is designed to meet high reliability standards, with a typical lifetime of 15 years or more, depending on operating conditions.

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