Part Image

GS61008T-TR - GaN Systems

Description: 100V, 90A, Enhancement mode GaN Transistor, GaNPX® package, Top-side cooled

Download GS61008T-TR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
GS61008T-TR - GaN Systems PCB footprint - Other - Other - GS61008T-TR
click to zoom
3D Models
GS61008T-TR - GaN Systems  - 3D model - Other - GS61008T-TR
click to zoom

GS61008T-TR Details

  • Manufacturer Part Number:

    GS61008T-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008T-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal design guidelines in their application notes. It's recommended to follow these guidelines to ensure optimal performance and thermal management.
  • Ensure proper thermal design, use a heat sink, and implement thermal monitoring and protection circuits. Also, follow the recommended operating conditions and derating guidelines.
  • The GS61008T-TR is designed to meet CISPR 25 and FCC Part 15 Class B emissions standards. However, proper PCB layout, shielding, and filtering may be required to meet specific system-level EMI and RFI requirements.
  • While the GS61008T-TR is a high-performance device, it may not meet the specific requirements for high-reliability or aerospace applications. GaN Systems offers other products that are specifically designed and qualified for these markets.
  • GaN Systems provides a range of tools and resources, including evaluation boards, software, and application notes. Additionally, their technical support team is available to assist with troubleshooting and debugging.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

GS61008T-TR Overview

Use the download button to access the GS61008T-TR schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like GS610, or try a keyword search, such as Power Field-Effect Transistors

Parts related to GS61008T-TR

Showing 0 results