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GS61008T-TR - Infineon

Description: GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Top-side cooled

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GS61008T-TR - Infineon PCB footprint - Other - Other - 4-SMD, No Lead
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GS61008T-TR - Infineon  - 3D model - Other - 4-SMD, No Lead
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GS61008T-TR Details

  • Manufacturer Part Number:

    GS61008T-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-XUUC-N4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    UNCASED CHIP

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS61008T-TR Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the GS61008T-TR. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • When selecting a gate driver for the GS61008T-TR, consider factors such as the driver's output current, voltage rating, and propagation delay. Infineon recommends using their dedicated gate driver ICs, such as the 1EDC or 2EDL families, which are specifically designed to work with their IGBT modules.
  • The GS61008T-TR's thermal performance is heavily dependent on the cooling system and heat sink design. Using a different cooling system or heat sink design may affect the module's thermal impedance, junction temperature, and overall reliability. It's crucial to consult with Infineon's thermal simulation tools and application notes to ensure the chosen cooling system meets the required thermal specifications.
  • Yes, the GS61008T-TR can be used in a parallel configuration to increase power handling. However, it's essential to ensure that the modules are properly matched, and the gate drive and control circuits are designed to accommodate the parallel configuration. Infineon provides guidelines and recommendations for parallel operation in their application notes and technical documentation.
  • The GS61008T-TR, like any other IGBT module, can generate electromagnetic interference (EMI) and affect electromagnetic compatibility (EMC). To minimize EMI and ensure EMC, follow Infineon's guidelines for PCB layout, shielding, and filtering. Additionally, consider using EMI filters, such as common-mode chokes, and ensure that the system meets the relevant EMC standards.

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GS61008T-TR Overview

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