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GS66502B-E01-MR - GaN Systems

Description: MOSFET 650V Enhancement Mode Transistor

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GS66502B-E01-MR - GaN Systems PCB footprint - Other - Other - GS66502B-E01-MR-2
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GS66502B-E01-MR - GaN Systems  - 3D model - Other - GS66502B-E01-MR-2
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GS66502B-E01-MR Details

  • Manufacturer Part Number:

    GS66502B-E01-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.5 pF

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66502B-E01-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide for PCB layout and thermal management. It's recommended to follow the guidelines for optimal performance and thermal dissipation. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 3 W/m-K is recommended.
  • GaN Systems provides a comprehensive application note (AN-001) that outlines the recommended biasing and configuration for optimal performance. It's essential to follow the recommended biasing and configuration to ensure the device operates within its specifications.
  • GaN Systems recommends using a gate drive circuit with a voltage swing of 0 to 5V, and a current capability of at least 1A. A gate resistor of 10-20 ohms is recommended to dampen oscillations. Additionally, a gate-source voltage (Vgs) of 4-5V is recommended for optimal performance.
  • GaN Systems recommends implementing overvoltage protection (OVP), overcurrent protection (OCP), and overtemperature protection (OTP) circuits to prevent damage to the device. A fuse or a current-limiting resistor can be used for OCP, and a thermistor or a thermal sensor can be used for OTP.
  • GaN Systems recommends using aluminum or gold wire bonding with a wire diameter of 0.7-1.0 mils. For die attach, a silver-filled epoxy or a silver-glass die attach material is recommended. It's essential to follow the recommended wire bonding and die attach procedures to ensure reliable operation.

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GS66502B-E01-MR Overview

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Part Image GS66502B-TR GaN Systems

Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET