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GS66504B-MR - GaN Systems

Description: 650V, 15A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled

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GS66504B-MR - GaN Systems PCB footprint - Other - Other - GS66504B-MR
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GS66504B-MR Details

  • Manufacturer Part Number:

    GS66504B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1.1 pF

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66504B-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal design guidelines in their application notes and design resources. It's recommended to follow these guidelines to ensure optimal performance and thermal management.
  • Ensure proper thermal design, use a heat sink, and implement thermal monitoring and protection circuits. Also, follow the recommended operating conditions, derating, and thermal management guidelines provided by GaN Systems.
  • GaN Systems provides EMI and RFI guidelines in their application notes. It's recommended to follow these guidelines, use proper shielding, and implement EMI filters to minimize electromagnetic interference and radio-frequency interference.
  • Yes, the GS66504B-MR can be used in a parallel configuration to increase power output. However, it's essential to follow GaN Systems' guidelines for paralleling devices, and ensure proper synchronization and current sharing to avoid uneven current distribution and thermal issues.
  • GaN Systems provides recommended gate drive circuits and layout considerations in their application notes. It's essential to follow these guidelines to ensure proper gate drive, minimize ringing, and reduce electromagnetic interference.

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