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GS66504B-TR - GaN Systems

Description: 650V, 15A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled

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GS66504B-TR - GaN Systems PCB footprint - Other - Other - GS66504B-TR
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GS66504B-TR Details

  • Manufacturer Part Number:

    GS66504B-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1.1 pF

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66504B-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal management guidelines in their application notes and design resources. It's recommended to follow these guidelines to ensure optimal performance and thermal management.
  • Ensure proper thermal management by following the recommended PCB layout and thermal design guidelines. Also, implement over-temperature protection and monitoring in your system design to prevent overheating.
  • GaN Systems provides recommended gate drive circuits and layout considerations in their application notes and design resources. It's recommended to follow these guidelines to ensure optimal switching performance and minimize ringing and oscillations.
  • Implement proper EMI filtering and shielding in your system design. GaN Systems also provides guidelines on EMI mitigation in their application notes and design resources.
  • GaN Systems provides reliability and lifetime data in their datasheet and application notes. The device is designed to meet high reliability standards, and its lifetime is dependent on operating conditions such as temperature, voltage, and current.

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GS66504B-TR Overview

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