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GS66508B-MR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor,  GaNPX® package, Bottom-side cooled

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GS66508B-MR - GaN Systems PCB footprint - Other - Other - GS66508B-MR
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GS66508B-MR Details

  • Manufacturer Part Number:

    GS66508B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.063 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-XBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66508B-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal design guidelines in their application notes. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Ensure proper thermal design, use a heat sink, and implement thermal monitoring and protection circuits. Also, follow the recommended operating conditions and derating guidelines to prevent overheating.
  • GaN Systems provides EMI and RFI guidelines in their application notes. It's recommended to follow these guidelines to minimize electromagnetic interference and ensure compliance with regulatory requirements.
  • Yes, the GS66508B-MR is designed for high-reliability applications. However, it's recommended to consult with GaN Systems' sales team and review the device's qualification data to ensure it meets the specific requirements of your application.
  • GaN Systems provides recommended gate drive circuitry designs in their application notes. It's recommended to follow these guidelines to ensure proper device operation and minimize switching losses.

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