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GS66508B-TR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor,  GaNPX® package, Bottom-side cooled

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GS66508B-TR - GaN Systems PCB footprint - Other - Other - GS66508B-TR
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GS66508B-TR - GaN Systems  - 3D model - Other - GS66508B-TR
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GS66508B-TR Details

  • Manufacturer Part Number:

    GS66508B-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.063 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-XBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66508B-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a recommended PCB layout guide for the GS66508B-TR, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance. Contact GaN Systems for more information.
  • To ensure reliable operation at high frequencies, it's essential to follow GaN Systems' guidelines for PCB design, component selection, and layout. Additionally, consider using a low-loss PCB material, minimizing trace lengths, and using a common-mode choke to reduce EMI.
  • While the datasheet specifies the maximum rated voltage, it's essential to follow GaN Systems' guidelines for voltage transient protection. The maximum allowed voltage transient on the drain-source pins is typically ±10% of the rated voltage, but this can vary depending on the specific application. Consult with GaN Systems for more information.
  • Optimizing the gate drive circuit for the GS66508B-TR involves selecting the right gate driver IC, setting the correct gate resistance, and ensuring proper decoupling. GaN Systems provides guidelines for gate drive circuit design, and it's recommended to consult with their application engineers for specific guidance.
  • For high-power applications, GaN Systems recommends using a combination of thermal interface materials (TIMs) and heat sinks or cold plates to ensure effective heat dissipation. The choice of cooling method depends on the specific application requirements, and GaN Systems can provide guidance on the most suitable approach.

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GS66508B-TR Overview

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