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GS66508T-MR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor,  GaNPX® package, Top-side cooled

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GS66508T-MR - GaN Systems PCB footprint - Other - Other - GS66508T-MR
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GS66508T-MR - GaN Systems  - 3D model - Other - GS66508T-MR
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GS66508T-MR Details

  • Manufacturer Part Number:

    GS66508T-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-XBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66508T-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide that includes recommended PCB layout and thermal management strategies for optimal performance. It's essential to follow these guidelines to ensure proper heat dissipation and minimize parasitic inductance.
  • To ensure reliable operation and prevent overheating, it's crucial to implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan or liquid cooling system. Additionally, monitor the device's temperature and adjust the operating conditions accordingly.
  • GaN Systems provides a gate drive application note that outlines recommended gate drive circuits and layout considerations for optimal switching performance. It's essential to follow these guidelines to minimize ringing, ensure proper switching, and reduce electromagnetic interference (EMI).
  • To protect the device, implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Additionally, follow proper handling and storage procedures to prevent ESD damage. GaN Systems also recommends using a TVS (transient voltage suppressor) diode for added protection.
  • GaN Systems provides a testing and validation guide that outlines the recommended procedures for ensuring the device meets the required specifications. This includes characterizing the device's electrical performance, thermal performance, and reliability.

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GS66508T-MR Overview

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