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GS66508T-TR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor,  GaNPX® package, Top-side cooled

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GS66508T-TR - GaN Systems PCB footprint - Other - Other - GS66508T-TR
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GS66508T-TR - GaN Systems  - 3D model - Other - GS66508T-TR
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GS66508T-TR Details

  • Manufacturer Part Number:

    GS66508T-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-XBCC-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66508T-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide for PCB layout and thermal management. It's recommended to follow the guidelines for optimal performance and thermal dissipation. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K is recommended.
  • GaN Systems provides a comprehensive application note (AN-001) that outlines the recommended biasing and configuration for optimal performance. It's essential to follow the recommended biasing and configuration to ensure the device operates within its specifications.
  • GaN Systems recommends using a gate drive circuit with a voltage swing of 0 to 5V, and a current capability of at least 1A. A gate resistor of 10-20 ohms and a gate capacitor of 1-10nF are also recommended. Additionally, a low-inductance gate drive circuit is essential to minimize ringing and ensure reliable operation.
  • GaN Systems recommends using a voltage clamp circuit to protect the device from overvoltage conditions. Additionally, a current sense resistor and a current limit circuit can be used to protect the device from overcurrent conditions. It's essential to follow the recommended protection circuits outlined in the application note (AN-001).
  • GaN Systems recommends using a thermistor or a thermocouple to monitor the device temperature. A thermal protection circuit can be implemented to shut down the device in case of overheating. It's essential to follow the recommended thermal monitoring and protection methods outlined in the application note (AN-001).

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GS66508T-TR Overview

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