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GS66516B-MR - GaN Systems

Description: 650V, 60A, Enhancement mode GaN Transistor,  GaNPX® package, Bottom-side cooled

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GS66516B-MR - GaN Systems - PCB symbol
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GS66516B-MR - GaN Systems PCB footprint - Other - Other - GS66516B-MR
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GS66516B-MR - GaN Systems - 3D model - Other - GS66516B-MR
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GS66516B-MR Details

  • Manufacturer Part Number:

    GS66516B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-XBCC-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

GS66516B-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design and layout guidelines in their application notes. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Monitor the device's junction temperature (TJ) and ensure it stays within the recommended operating range. Implement a thermal management strategy, such as a heat sink or fan, to keep TJ below 125°C. Also, ensure proper PCB design and layout to minimize thermal resistance.
  • The recommended gate drive voltage is between 5V and 10V, with a maximum current limit of 1A. However, it's essential to consult the datasheet and application notes for specific guidelines on gate drive requirements.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges. GaN Systems recommends using a TVS diode or a zener diode for OVP and a current sense resistor with a comparator for OCP.
  • Follow proper PCB design and layout practices to minimize EMI and RFI. Use a shielded enclosure, and consider adding EMI filters or common-mode chokes to reduce emissions. Consult the datasheet and application notes for specific guidelines on EMI and RFI mitigation.

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GS66516B-MR Overview

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