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GS66516B-MR - Infineon

Description: GaN FETs 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled

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GS66516B-MR - Infineon - PCB symbol
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GS66516B-MR - Infineon PCB footprint - Other - Other - PG-ULGA-6-981
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GS66516B-MR - Infineon - 3D model - Other - PG-ULGA-6-981
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GS66516B-MR Details

  • Manufacturer Part Number:

    GS66516B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.9 pF

  • JESD-30 Code:

    R-XBCC-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66516B-MR Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN2013-03, which includes guidelines for copper thickness, thermal vias, and component placement to ensure optimal heat dissipation.
  • The input capacitor selection depends on the input voltage, ripple current, and ESR requirements. Infineon's application note AN2013-04 provides guidelines for selecting the correct input capacitor, including a capacitor selection table.
  • The recommended startup sequence is to apply the input voltage (VIN) first, followed by the enable signal (EN). This ensures proper startup and prevents damage to the device.
  • Infineon provides a troubleshooting guide in the application note AN2013-05, which includes step-by-step procedures for common issues, including over-temperature shutdown and under-voltage lockout.
  • Infineon recommends using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK. Examples of suitable TIMs are graphite pads, thermal tapes, or thermal greases.

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