Part Image

GS66516B-TR - GaN Systems

Description: 650V, 60A, Enhancement mode GaN Transistor,  GaNPX® package, Bottom-side cooled

Download GS66516B-TR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
GS66516B-TR - GaN Systems PCB footprint - Other - Other - GS66516B-TR
click to zoom
3D Models
GS66516B-TR - GaN Systems  - 3D model - Other - GS66516B-TR
click to zoom

GS66516B-TR Details

  • Manufacturer Part Number:

    GS66516B-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-XBCC-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

GS66516B-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a recommended PCB layout guide in their application note AN-001, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and case temperature (Tc). Additionally, consider using a thermal interface material (TIM) and a heat sink to dissipate heat effectively.
  • According to GaN Systems, the maximum allowed voltage overshoot during turn-on and turn-off is 10% of the maximum rated voltage (Vds). Exceeding this limit may damage the device or affect its reliability.
  • To protect the GS66516B-TR from ESD, follow proper handling and storage procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate drive voltage is typically between 4.5V and 6V, and the recommended gate drive current is around 1A to 2A. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

GS66516B-TR Overview

Use the download button to access the GS66516B-TR schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like GS665, or try a keyword search, such as Power Field-Effect Transistors

Parts related to GS66516B-TR

Showing 0 results