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GS66516T-MR - GaN Systems

Description: 650V, 60A, Enhancement mode GaN Transistor,  GaNPX® package, Top-side cooled

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GS66516T-MR - GaN Systems - PCB symbol
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PCB Footprints
GS66516T-MR - GaN Systems PCB footprint - Other - Other - GS66516T-MR
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GS66516T-MR - GaN Systems - 3D model - Other - GS66516T-MR
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GS66516T-MR Details

  • Manufacturer Part Number:

    GS66516T-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    5.9 pF

  • JESD-30 Code:

    R-PDSO-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66516T-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design and layout guidelines in their application notes and evaluation boards. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Monitor the device's junction temperature (TJ) and ensure it stays within the recommended operating range. Implement a thermal management strategy, such as a heat sink or fan, and ensure good airflow around the device.
  • The recommended gate drive voltage is between 4.5V and 15V, and the current limit is 10mA. However, it's recommended to consult the datasheet and application notes for specific guidance on gate drive requirements.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. GaN Systems also recommends using a TVS diode or a zener diode for OVP. Consult the datasheet and application notes for specific guidance.
  • The recommended operating conditions are specified in the datasheet. Ensure reliable operation by following the recommended operating conditions, and consult the application notes for guidance on derating and margining.

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GS66516T-MR Overview

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