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GT60PR21 - Toshiba

Description: (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: Tj = 175  (max)

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PCB Footprints
GT60PR21 - Toshiba PCB footprint - Other - Other - 2-16C1S
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3D Models
GT60PR21 - Toshiba  - 3D model - Other - 2-16C1S
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GT60PR21 Details

  • Manufacturer Part Number:

    GT60PR21

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

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