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H11F1VM - onsemi

Description: As a remote variable resistor: ; ≥ 100GΩ I/O isolation resistanceAs an analog switch: ; No charge injection or latch-up; ≤ 100Ω to ≥ 300MΩ; ≤ 15pF shunt capacitance; UL recognized (File #E90700); 60 Vpk-pk signal capability; Extremely low offset voltage

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H11F1VM - onsemi PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - RA0/ICSPDAT
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3D Models
H11F1VM - onsemi  - 3D model - Dual-In-Line Packages - RA0/ICSPDAT
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H11F1VM Details

  • Manufacturer Part Number:

    H11F1VM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PDIP-6

  • Package Description:

    DIP-6

  • Manufacturer Package Code:

    646BX

  • Country Of Origin:

    Thailand

  • HTS Code:

    8541.40.80.00

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    UL RECOGNIZED, VDE APPROVED

  • Coll-Emtr Bkdn Voltage-Min:

    30 V

  • Configuration:

    SINGLE

  • Dark Current-Max:

    50 nA

  • Forward Current-Max:

    0.06 A

  • Forward Voltage-Max:

    1.75 V

  • Isolation Voltage-Max:

    7500 V

  • JESD-609 Code:

    e3

  • Mounting Feature:

    THROUGH HOLE MOUNT

  • Number of Elements:

    1

  • On-State Current-Max:

    1 A

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Optoelectronic Device Type:

    FET OUTPUT OPTOCOUPLER

  • Power Dissipation-Max:

    0.1 W

  • Response Time-Max:

    0.000025 s

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

H11F1VM Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power dissipation and using a thermal interface material can help.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the specified Tj range to maintain reliability and performance.
  • To handle ESD protection for the H11F1VM, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the system design. Additionally, ensuring that the device is powered down during handling can help prevent ESD damage.
  • When using the H11F1VM in a high-reliability or automotive application, it's essential to consider factors such as device qualification, testing, and validation. Additionally, ensuring that the device meets the required automotive standards (e.g., AEC-Q101) and following proper design and manufacturing guidelines can help ensure reliability and performance.

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H11F1VM Overview

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