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H5TQ4G83AFR-PBC - Hynix

Description: DDR DRAM, 512MX8, 0.225ns, CMOS, PBGA78

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H5TQ4G83AFR-PBC - Hynix PCB footprint - BGA - BGA - Package Dimension(x4/x8): 78Ball Fine Pitch Ball Grid Array Outline
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H5TQ4G83AFR-PBC - Hynix  - 3D model - BGA - Package Dimension(x4/x8): 78Ball Fine Pitch Ball Grid Array Outline
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H5TQ4G83AFR-PBC Details

  • Manufacturer Part Number:

    H5TQ4G83AFR-PBC

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

  • Pin Count:

    78

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    SK Hynix Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.225 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    800 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B78

  • Length:

    11 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    DDR3 DRAM

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    78

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA78,9X13,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.011 A

  • Supply Current-Max:

    0.15 mA

  • Supply Voltage-Max (Vsup):

    1.575 V

  • Supply Voltage-Min (Vsup):

    1.425 V

  • Supply Voltage-Nom (Vsup):

    1.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Width:

    9 mm

H5TQ4G83AFR-PBC Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the H5TQ4G83AFR-PBC is 0°C to 95°C, with a junction temperature (Tj) of up to 105°C.
  • To ensure signal integrity and reduce noise, it is recommended to follow the PCB layout guidelines provided in the datasheet, use a solid ground plane, and add decoupling capacitors near the DDR4 SDRAM. Additionally, consider using a signal integrity analysis tool to simulate and optimize your design.
  • The recommended refresh rate for the H5TQ4G83AFR-PBC is 4x per tREFI (Refresh Interval) = 3.9 μs at 1.2V, which translates to a refresh rate of 1,024 refreshes per second.
  • The H5TQ4G83AFR-PBC is designed to operate at a voltage supply of 1.2V, with a tolerance of ±0.06V. Operating the device outside of this voltage range may affect its performance, reliability, or even cause damage. It is recommended to use a voltage regulator to ensure a stable and accurate voltage supply.
  • The H5TQ4G83AFR-PBC has built-in error detection and correction mechanisms, such as ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). It is recommended to implement a robust error handling mechanism in your system, including error detection, correction, and reporting, to ensure data integrity and system reliability.

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