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H7N0308CF - Renesas Electronics

Description: Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0

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PCB Footprints
H7N0308CF - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220CFM
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3D Models
H7N0308CF - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-220CFM
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H7N0308CF Details

  • Manufacturer Part Number:

    H7N0308CF

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220CF

  • Package Description:

    TO-220CFM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0.4

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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H7N0308CF Overview

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