HAF2007(L) - Renesas Electronics

HAF2007(L) Details

• Manufacturer Part Number:

  HAF2007(L)

• Part Life Cycle Code:

  Active

• Package Description:

  IN-LINE, R-PSIP-T3

• Pin Count:

  3

• Reach Compliance Code:

  Unknown

• Manufacturer:

  Renesas Electronics Corporation

• Additional Feature:

  BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  60 V

• Drain Current-Max (Abs) (ID):

  5 A

• Drain Current-Max (ID):

  5 A

• Drain-source On Resistance-Max:

  0.12 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PSIP-T3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  IN-LINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  20 W

• Pulsed Drain Current-Max (IDM):

  10 A

• Qualification Status:

  Not Qualified

• Subcategory:

  FET General Purpose Power

• Surface Mount:

  NO

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON