HAF20 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	HAF2007(S) Renesas Electronics	1	Silicon N Channel MOS FET Series Power Switching	Other	HAF2007(S)	3D model not available Symbol and footprint available 2	1 Download Model
	HAF2015RJ Renesas Electronics	1	This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.	Small Outline Packages	HAF2015RJ	3D model available Symbol and footprint available 3	1 Download Model
	HAF2007(L) Renesas Electronics	1	Silicon N Channel MOS FET Series Power Switching	Transistor Outline, Vertical	HAF2007(L)	3D model available Symbol and footprint available 3	1 Download Model
	HAF2026RJ-EL-E Renesas Electronics	1	This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .	Small Outline Packages	HAF2026RJ-EL-E	3D model available Symbol and footprint available 3	1 Download Model

	HAF2005 Renesas Electronics	1	This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.	Other	HAF2005	3D model available Symbol and footprint available 3	1 Download Model
	HAF2026RJ Renesas Electronics	1	This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .	Small Outline Packages	HAF2026RJ	3D model available Symbol and footprint available 3	1 Download Model
	HAF2015RJ-EL-E Renesas Electronics	1	This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.	Small Outline Packages	HAF2015RJ-EL-E	3D model available Symbol and footprint available 3	1 Download Model
	HAF2008 Hitachi Ltd	1	Power Field-Effect Transistor, 20A I(D), 0.06ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2008	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2007-90S Renesas Electronics Corporation	1	Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2007-90S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2021(S) Renesas Electronics Corporation	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2021(S)	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2011-90S Renesas Electronics Corporation	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2011-90S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2012S Renesas Electronics Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2012S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2002 Renesas Electronics Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		HAF2002	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2011-90STR Renesas Electronics Corporation	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2011-90STR	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2012(S)-(1) Hitachi Ltd	1	Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2012(S)-(1)	3D model not available Symbol and footprint not available 0	0 Build or Request

	HAF2007(S) Hitachi Ltd	1	Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2007(S)	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2001 Renesas Electronics Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		HAF2001	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2027-90STL-E Renesas Electronics Corporation	1	Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2027-90STL-E	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2011-90STL Renesas Electronics Corporation	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2011-90STL	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2025-90STR Renesas Electronics Corporation	1	Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2025-90STR	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2007(S)-1 Hitachi Ltd	1	Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2007(S)-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2025-90L Renesas Electronics Corporation	1	Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2025-90L	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2014-90 Renesas Electronics Corporation	1	Power Field-Effect Transistor, 40A I(D), 60V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		HAF2014-90	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2007(S)-2 Renesas Electronics Corporation	1	Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		HAF2007(S)-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	HAF2017-90STL Renesas Electronics Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		HAF2017-90STL	3D model not available Symbol and footprint not available 0	0 Build or Request
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