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HAF2007(S) - Renesas Electronics

Description: Silicon N Channel MOS FET Series Power Switching

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HAF2007(S) - Renesas Electronics PCB footprint - Other - Other - DPAK (S)
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HAF2007(S) Details

  • Manufacturer Part Number:

    HAF2007(S)

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Pin Count:

    3

  • Reach Compliance Code:

    Unknown

  • Manufacturer:

    Renesas Electronics Corporation

  • Additional Feature:

    BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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Part Image HAF2007(S) Hitachi Ltd

Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET