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HAT2016R-EL-E - Renesas Electronics

Description: The HAT2016R is a Nch Dual Power Mosfet 30V 6.5A 45Mohm Sop8.

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PCB Footprints
HAT2016R-EL-E - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - PRSP0008DD-D
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3D Models
HAT2016R-EL-E - Renesas Electronics  - 3D model - Small Outline Packages - PRSP0008DD-D
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HAT2016R-EL-E Details

  • Manufacturer Part Number:

    HAT2016R-EL-E

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOP

  • Package Description:

    SOP-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    PRSP0008DD

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    170 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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HAT2016R-EL-E Overview

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