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HFA3102BZ - Renesas Electronics

Description: The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.

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Symbol
HFA3102BZ - Renesas Electronics - PCB symbol
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PCB Footprints
HFA3102BZ - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M14.15
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HFA3102BZ - Renesas Electronics - 3D model - Small Outline Packages - M14.15
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HFA3102BZ Details

  • Manufacturer Part Number:

    HFA3102BZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOICN

  • Pin Count:

    14

  • Manufacturer Package Code:

    M14.15

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.03 A

  • Collector-Base Capacitance-Max:

    300 pF

  • Collector-Emitter Voltage-Max:

    8 V

  • Configuration:

    COMPLEX

  • DC Current Gain-Min (hFE):

    40

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    MS-012AB

  • JESD-30 Code:

    R-PDSO-G14

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    6

  • Number of Terminals:

    14

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10000 MHz

HFA3102BZ Frequently Asked Questions (FAQs)

  • A good PCB layout is crucial for the HFA3102BZ. Ensure that the input and output traces are short and symmetrical, and keep the power supply decoupling capacitors close to the device. Use a solid ground plane and avoid vias under the device. Refer to the Renesas application note 'HFA3102BZ PCB Layout Guidelines' for more information.
  • To optimize the output stage for maximum power efficiency, ensure that the output impedance is matched to the load impedance. Use a low-ESR output capacitor and optimize the output inductor value. Additionally, consider using a Class-D output stage or a switching amplifier topology to reduce power losses.
  • The recommended operating temperature range for the HFA3102BZ is -40°C to +85°C. However, the device can operate up to +125°C with reduced performance and reliability. Ensure that the device is properly heat-sinked and that the PCB is designed to dissipate heat efficiently.
  • To protect the HFA3102BZ from ESD and overvoltage, use ESD protection diodes on the input and output pins. Add a TVS (Transient Voltage Suppressor) diode on the power supply line to protect against overvoltage. Ensure that the PCB has a robust ESD protection scheme and follow the recommended layout guidelines.
  • The maximum allowable power dissipation for the HFA3102BZ is 1.5W. Ensure that the device is properly heat-sinked and that the PCB is designed to dissipate heat efficiently. Calculate the power dissipation using the formula: Pd = (Vcc x Icc) + (Vout x Iout).

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HFA3102BZ Overview

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