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HFA3135IHZ96
Renesas Electronics
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1 | The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. | SOT23 (6-Pin) | Check Price & Stock |
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HFA3134IHZ96
Renesas Electronics
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1 | The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. | SOT23 (6-Pin) | Check Price & Stock |
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HFA3127RZ96
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Quad Flat No-Lead | Check Price & Stock |
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HFA3128BZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a | Small Outline Packages | Check Price & Stock |
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HFA3127BZ96
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Small Outline Packages | Check Price & Stock |
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HFA3101BZ96
Renesas Electronics
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1 | The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms. | Small Outline Packages | Check Price & Stock |
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HFA3128RZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a | Quad Flat No-Lead | Check Price & Stock |
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HFA3102BZ96
Renesas Electronics
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1 | The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA. | Small Outline Packages | Check Price & Stock |
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HFA3127BZ
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Small Outline Packages | Check Price & Stock |
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HFA3101BZ
Renesas Electronics
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1 | The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms. | Small Outline Packages | Check Price & Stock |
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HFA3102BZ
Renesas Electronics
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1 | The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA. | Small Outline Packages | Check Price & Stock |
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HFA3127RZ
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Quad Flat No-Lead | Check Price & Stock |
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HFA3128B
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a | Small Outline Packages | Check Price & Stock |
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HFA3128R
Renesas Electronics
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1 | Bipolar Transistors - BJT | Quad Flat No-Lead | Check Price & Stock |
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HFA3128B96
Renesas Electronics
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1 | Bipolar Transistors - BJT | Small Outline Packages | Check Price & Stock |
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HFA3128R96
Renesas Electronics
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1 | Bipolar Transistors - BJT | Quad Flat No-Lead | Check Price & Stock |
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HFA3128RZ96
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a | Quad Flat No-Lead | Check Price & Stock |
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HFA3128BZ96
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a | Small Outline Packages | Check Price & Stock |
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HFA3127Y
Intersil Corporation
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0 | HFA3127Y | Check Price & Stock |
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HFA3128R
Intersil Corporation
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1 | 5 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, MO-220VEED-2, 3 X 3 MM, PLASTIC, QFN-16 | Check Price & Stock |
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HFA3128RZ
Intersil Corporation
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1 | 5 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, MO-220VEED-2, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, QFN-16 | Check Price & Stock |
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HFA3127MJ/883
Harris Semiconductor
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1 | RF Small Signal Bipolar Transistor, 0.0113A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN | Check Price & Stock |
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HFA3134IH96
Intersil Corporation
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1 | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | Check Price & Stock |
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HFA3102B
Harris Semiconductor
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1 | RF Small Signal Bipolar Transistor, 0.03A I(C), C Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN | Check Price & Stock |
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HFA3127MJ
Intersil Corporation
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1 | 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | Check Price & Stock |
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