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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	HFA3127RZ Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Quad Flat No-Lead	HFA3127RZ	3D model available Symbol and footprint available 3	1 Download Model
	HFA3101BZ Renesas Electronics	1	The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.	Small Outline Packages	HFA3101BZ	3D model available Symbol and footprint available 3	1 Download Model
	HFA3127BZ Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Small Outline Packages	HFA3127BZ	3D model available Symbol and footprint available 3	1 Download Model
	HFA3102BZ Renesas Electronics	1	The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.	Small Outline Packages	HFA3102BZ	3D model available Symbol and footprint available 3	1 Download Model

	HFA3127RZ96 Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Quad Flat No-Lead	HFA3127RZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3134IHZ96 Renesas Electronics	1	The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations.	SOT23 (6-Pin)	HFA3134IHZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128BZ Renesas Electronics	1	Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a	Small Outline Packages	HFA3128BZ	3D model available Symbol and footprint available 3	1 Download Model
	HFA3127BZ96 Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Small Outline Packages	HFA3127BZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3101BZ96 Renesas Electronics	1	The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.	Small Outline Packages	HFA3101BZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128RZ Renesas Electronics	1	Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a	Quad Flat No-Lead	HFA3128RZ	3D model available Symbol and footprint available 3	1 Download Model
	HFA3102BZ96 Renesas Electronics	1	The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.	Small Outline Packages	HFA3102BZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3135IHZ96 Renesas Electronics	1	The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations.	SOT23 (6-Pin)	HFA3135IHZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128R96 Renesas Electronics	1	Bipolar Transistors - BJT	Quad Flat No-Lead	HFA3128R96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128RZ96 Renesas Electronics	1	Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a	Quad Flat No-Lead	HFA3128RZ96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128BZ96 Renesas Electronics	1	Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a	Small Outline Packages	HFA3128BZ96	3D model available Symbol and footprint available 3	1 Download Model

	HFA3128R Renesas Electronics	1	Bipolar Transistors - BJT	Quad Flat No-Lead	HFA3128R	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128B96 Renesas Electronics	1	Bipolar Transistors - BJT	Small Outline Packages	HFA3128B96	3D model available Symbol and footprint available 3	1 Download Model
	HFA3128B Renesas Electronics	1	Support is limited to customers who have already adopted these products.The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier a	Small Outline Packages	HFA3128B	3D model available Symbol and footprint available 3	1 Download Model
	HFA3127MJ/883 Harris Semiconductor	1	RF Small Signal Bipolar Transistor, 0.0113A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN		HFA3127MJ/883	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3127MJ Intersil Corporation	1	RF Small Signal Bipolar Transistor, 0.0113A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN		HFA3127MJ	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3128RZ Intersil Corporation	1	RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, PNP, MO-220VEED-2		HFA3128RZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3134IH96 Intersil Corporation	1	RF Small Signal Bipolar Transistor, 0.026A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN		HFA3134IH96	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3135IH96 Renesas Electronics Corporation	1	RF Small Signal Bipolar Transistor, 0.026A I(C), 2-Element, Ultra High Frequency Band, Silicon, PNP		HFA3135IH96	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3128R Intersil Corporation	1	RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, PNP, MO-220VEED-2		HFA3128R	3D model not available Symbol and footprint not available 0	0 Build or Request
	HFA3102B Harris Semiconductor	1	RF Small Signal Bipolar Transistor, 0.03A I(C), C Band, Silicon, NPN, MS-012AB		HFA3102B	3D model not available Symbol and footprint not available 0	0 Build or Request
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