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HFA3135IHZ96 - Renesas Electronics

Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations.

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HFA3135IHZ96 - Renesas Electronics PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - P6.064-ren1
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HFA3135IHZ96 - Renesas Electronics  - 3D model - SOT23 (6-Pin) - P6.064-ren1
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HFA3135IHZ96 Details

  • Manufacturer Part Number:

    HFA3135IHZ96

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT23

  • Package Description:

    SOT-23, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    P6.064

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2017-10-23

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    4

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.026 A

  • Collector-Base Capacitance-Max:

    0.4 pF

  • Collector-Emitter Voltage-Max:

    4 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    15

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    7000 MHz

  • VCEsat-Max:

    0.25 V

HFA3135IHZ96 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal gradients. Also, consider using a thermal interface material to improve heat transfer.
  • Critical timing parameters include clock frequency, setup and hold times, and output delay. Ensure that these parameters are met by carefully designing the PCB layout, selecting suitable components, and verifying the design through simulation and testing.
  • Implement ESD protection measures such as using ESD-protection diodes, TVS diodes, or ESD-protected buffers. Also, ensure that the PCB design includes ESD-protection features such as guard rings and ESD-protection zones.
  • The power sequencing requirements are critical to ensure reliable operation. Ensure that the power supplies are sequenced correctly, with the core voltage (VCC) being powered up before the I/O voltage (VCCIO).

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HFA3135IHZ96 Overview

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