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HFA3127RZ - Renesas Electronics

Description: The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while

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HFA3127RZ - Renesas Electronics - PCB symbol
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PCB Footprints
HFA3127RZ - Renesas Electronics PCB footprint - Quad Flat No-Lead - Quad Flat No-Lead - L16.3x3
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3D Models
HFA3127RZ - Renesas Electronics - 3D model - Quad Flat No-Lead - L16.3x3
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HFA3127RZ Details

  • Manufacturer Part Number:

    HFA3127RZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    QFN

  • Package Description:

    QFN-16

  • Pin Count:

    16

  • Manufacturer Package Code:

    L16.3X3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.037 A

  • Collector-Base Capacitance-Max:

    0.2 pF

  • Collector-Emitter Voltage-Max:

    8 V

  • Configuration:

    SEPARATE, 5 ELEMENTS

  • DC Current Gain-Min (hFE):

    40

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    S-PQCC-N16

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    5

  • Number of Terminals:

    16

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    8000 MHz

HFA3127RZ Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize noise and coupling. Use a common mode choke or ferrite bead to filter the power supply lines.
  • Use a thermally conductive material for the heat sink, and ensure good thermal contact between the device and the heat sink. Keep the junction temperature below 150°C. Use a temperature sensor to monitor the device temperature and adjust the operating conditions accordingly.
  • The maximum allowed input voltage swing is ±2.5V, but it's recommended to keep it below ±2V to ensure optimal performance and minimize distortion.
  • Use a low-ESR output capacitor (e.g., ceramic or film capacitor) and a high-current output inductor. Ensure the output stage is properly biased and the output transistors are adequately heat-sinked. Use a thermal design that allows for efficient heat dissipation.
  • The recommended input impedance is 50Ω, but it can be adjusted to match the source impedance for optimal power transfer. However, keep in mind that a lower input impedance may affect the noise figure and gain of the amplifier.

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HFA3127RZ Overview

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