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HGTP20N60A4 - onsemi

Description: Obsolete - IGBT, 600V, SMPS

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HGTP20N60A4 - onsemi - PCB symbol
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PCB Footprints
HGTP20N60A4 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_
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3D Models
HGTP20N60A4 - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_
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HGTP20N60A4 Details

  • Manufacturer Part Number:

    HGTP20N60A4

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB ALTERNATE VERSION, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    70 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    160 ns

  • Turn-on Time-Nom (ton):

    28 ns

HGTP20N60A4 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the HGTP20N60A4 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and that the junction temperature remains below 150°C.
  • To ensure proper cooling, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the HGTP20N60A4 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It is recommended to consult the application note or contact onsemi support for more information.
  • Yes, the HGTP20N60A4 is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to ensure that the device is properly cooled and that the switching frequency does not exceed the recommended maximum frequency rating. Additionally, the gate drive circuitry should be designed to minimize ringing and ensure proper switching characteristics.
  • To protect the HGTP20N60A4 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.

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HGTP20N60A4 Overview

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