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HIP2100EIBZ - Renesas Electronics

Description: The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with t

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HIP2100EIBZ - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M8.15C
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HIP2100EIBZ - Renesas Electronics  - 3D model - Small Outline Packages - M8.15C
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HIP2100EIBZ Details

  • Manufacturer Part Number:

    HIP2100EIBZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOICN-EP

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    M8.15C

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-10-27

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.89 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    2 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HLSOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.68 mm

  • Supply Current-Max:

    3 mA

  • Supply Voltage-Max:

    14 V

  • Supply Voltage-Min:

    9 V

  • Supply Voltage-Nom:

    12 V

  • Supply Voltage1-Max:

    114 V

  • Supply Voltage1-Min:

    7 V

  • Supply Voltage1-Nom:

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.045 µs

  • Turn-on Time:

    0.045 µs

  • Width:

    3.9 mm

HIP2100EIBZ Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The HIP2100EIBZ should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal gradients. Additionally, consider using thermal simulation tools to optimize the design.
  • Use a shielded enclosure, ensure proper grounding and decoupling, and follow best practices for PCB layout and component placement. Additionally, consider using EMI filters and shielding components to minimize emissions.
  • Use a logic analyzer or oscilloscope to monitor the device's signals, and check for proper power supply and clock signal integrity. Consult the datasheet and application notes for troubleshooting guides and FAQs.
  • Higher frequencies can increase power consumption and heat generation. Ensure that the device is properly cooled, and consider using a heat sink or thermal pad. Additionally, ensure that the PCB is designed to minimize signal reflections and ringing.

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HIP2100EIBZ Overview

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Half Bridge Based MOSFET Driver, 2A, CMOS, PDSO8