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HIP2100IBZ - Renesas Electronics

Description: The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with t

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HIP2100IBZ - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M8.15-ren4
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HIP2100IBZ Details

  • Manufacturer Part Number:

    HIP2100IBZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOICN

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    M8.15

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-10-27

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    2 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.75 mm

  • Supply Current-Max:

    3 mA

  • Supply Voltage-Max:

    14 V

  • Supply Voltage-Min:

    9 V

  • Supply Voltage-Nom:

    12 V

  • Supply Voltage1-Max:

    114 V

  • Supply Voltage1-Min:

    7 V

  • Supply Voltage1-Nom:

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.045 µs

  • Turn-on Time:

    0.045 µs

  • Width:

    3.9 mm

HIP2100IBZ Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane, and a thermal relief pattern on the top layer is recommended. Keep the switching nodes away from sensitive analog circuits and ensure a low-impedance return path for the high-frequency currents.
  • To minimize standby power consumption, ensure that the EN pin is driven low during shutdown, and the input voltage is removed. Additionally, use a low-quiescent-current regulator for the VCC supply, and consider using a low-power mode for the controller.
  • Critical components include the input capacitors, output inductors, and MOSFETs. Ensure their reliability by selecting components with high ripple current ratings, low ESR, and high temperature ratings. Follow the recommended PCB layout and thermal management guidelines to minimize stress on these components.
  • Use an oscilloscope to monitor the input and output voltages, and the switching node waveforms. Check for proper pin connections, and ensure that the input voltage and current ratings are not exceeded. Consult the datasheet and application notes for troubleshooting guides and FAQs.
  • Ensure good airflow around the device, and use a thermal interface material (TIM) between the device and the heat sink. Follow the recommended PCB layout and thermal management guidelines to minimize thermal resistance and ensure reliable operation up to the maximum junction temperature (TJ) rating.

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