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HMC470ALP3E - Analog Devices

Description: Analog Devices HMC470ALP3E, Voltage Variable Attenuator, 31dB, 3GHz, 16-Pin LFCSP

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HMC470ALP3E - Analog Devices PCB footprint - Quad Flat No-Lead - Quad Flat No-Lead - 74VHC4051AFT(BE)
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HMC470ALP3E - Analog Devices  - 3D model - Quad Flat No-Lead - 74VHC4051AFT(BE)
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HMC470ALP3E Details

  • Manufacturer Part Number:

    HMC470ALP3E

  • Brand Name:

    Analog Devices Inc

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-220VEED-4, 16 PIN

  • Pin Count:

    16

  • Manufacturer Package Code:

    HCP-16-1

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.01

  • Date Of Intro:

    2016-07-20

  • Manufacturer:

    Analog Devices Inc

  • YTEOL:

    8.5

  • Additional Feature:

    CMOS COMPATIBLE

  • Attenuation-Nom:

    31 dB

  • Characteristic Impedance:

    50 Ω

  • Construction:

    COMPONENT

  • Input Power-Max (CW):

    25 dBm

  • Insertion Loss-Max:

    2 dB

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Terminals:

    16

  • Operating Frequency-Max:

    3000 MHz

  • Operating Frequency-Min:

    100 MHz

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Equivalence Code:

    LCC16,.12SQ,20

  • Power Supplies:

    3/5 V

  • RF/Microwave Device Type:

    VARIABLE ATTENUATOR

  • Surface Mount:

    YES

  • Technology:

    GAAS

  • Terminal Finish:

    Matte Tin (Sn)

  • VSWR-Max:

    1.5

HMC470ALP3E Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal signal path lengths, minimal thermal resistance, and adequate heat sinking. A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A thermal via array can also be used to improve heat dissipation.
  • The input and output matching networks should be optimized for maximum gain and efficiency using a combination of simulation tools and empirical methods. The device's S-parameters can be used to design the matching networks, and the optimal matching network topology and component values can be determined through simulation and experimentation.
  • The recommended biasing and tuning procedures involve setting the gate voltage to the recommended value, adjusting the drain voltage to achieve the desired output power, and tuning the input and output matching networks for maximum gain and efficiency. The device's biasing and tuning procedures should be performed in a specific order to avoid damage to the device.
  • The device's SOA should be carefully monitored to prevent damage. The device's voltage, current, and power dissipation should be kept within the recommended limits, and the device's temperature should be monitored to prevent overheating. The device's SOA can be monitored using on-chip sensors and external monitoring circuits.
  • The device is sensitive to electrostatic discharge (ESD) and requires proper handling and protection procedures to prevent damage. The device should be handled in an ESD-controlled environment, and ESD protection devices such as diodes and resistors should be used to protect the device from ESD events.

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HMC470ALP3E Overview

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About Analog Devices

Analog Devices Inc. is a global leader in the design and manufacturing of analog, mixed-signal, and digital signal processing integrated circuits and software solutions for the industrial, automotive, healthcare, communications industries. Analog Devices serves a diverse range of markets including industrial, automotive, healthcare, energy, aerospace, defense, and consumer electronics industries. Analog Devices’ product portfolio includes a wide range of ICs, modules, and subsystems.

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