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HN2S02JE(TE85L,F) - Toshiba

Description: Schottky Diodes & Rectifiers Small-Signal Schttky 0.1A 40V 2 Circuit

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HN2S02JE(TE85L,F) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - HN2S02JE
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HN2S02JE(TE85L,F) - Toshiba  - 3D model - SO Transistor Flat Lead - HN2S02JE
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HN2S02JE(TE85L,F) Details

  • Manufacturer Part Number:

    HN2S02JE(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.6 V

  • JESD-30 Code:

    R-PDSO-F5

  • Non-rep Pk Forward Current-Max:

    1 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.1 W

  • Rep Pk Reverse Voltage-Max:

    45 V

  • Reverse Current-Max:

    5 µA

  • Reverse Test Voltage:

    40 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

HN2S02JE(TE85L,F) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the HN2S02JE is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To handle the HN2S02JE's ESD sensitivity, it's crucial to follow proper electrostatic discharge (ESD) precautions during handling, storage, and assembly. This includes using ESD-safe materials, grounding personnel, and avoiding direct contact with the device's pins.
  • The maximum allowable power dissipation for the HN2S02JE is 1.5 W, as specified in the datasheet. Exceeding this limit can lead to device failure or reduced lifespan. Ensure that your design takes into account the device's power dissipation and provides adequate heat sinking or thermal management.
  • While the HN2S02JE is a high-quality device, it's essential to consult with Toshiba America Electronic Components or a qualified representative to determine its suitability for high-reliability or automotive applications. Additional testing, validation, or certification may be required to ensure the device meets the specific requirements of these industries.
  • The HN2S02JE's pinout and package dimensions are detailed in the datasheet. Ensure that you carefully review the pin assignments, package outline, and recommended land patterns to avoid errors during PCB design and assembly.

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HN2S02JE(TE85L,F) Overview

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Part Image HN2S02JE(TE85L) Toshiba America Electronic Components

Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 45V V(RRM), Silicon