HP8MA2TB1 - ROHM Semiconductor

HP8MA2TB1 Details

• Manufacturer Part Number:

  HP8MA2TB1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  HSOP-8

• ECCN Code:

  EAR99

• Factory Lead Time:

  21 Weeks

• Date Of Intro:

  2016-07-13

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  5.4

• Avalanche Energy Rating (Eas):

  11 mJ

• Case Connection:

  DRAIN

• Configuration:

  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain-source On Resistance-Max:

  0.0165 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PDSO-F6

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  2

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL AND P-CHANNEL

• Pulsed Drain Current-Max (IDM):

  48 A

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  FLAT

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  10

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON