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HS1-6664RH-Q - Renesas Electronics

Description: The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr

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HS1-6664RH-Q - Renesas Electronics PCB footprint - Ceramic Dual-In-Line Packages - Ceramic Dual-In-Line Packages - D28.6
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HS1-6664RH-Q Details

  • Manufacturer Part Number:

    HS1-6664RH-Q

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SBDIP

  • Package Description:

    SIDE BRAZED, CERAMIC, DIP-28

  • Pin Count:

    28

  • Manufacturer Package Code:

    D28.6

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.71

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • JESD-30 Code:

    R-CDIP-T28

  • JESD-609 Code:

    e0

  • Memory Density:

    65536 bit

  • Memory IC Type:

    OTP ROM

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Number of Words:

    8192 words

  • Number of Words Code:

    8000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    8KX8

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Code:

    DIP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Parallel/Serial:

    PARALLEL

  • Qualification Status:

    Not Qualified

  • Screening Level:

    MIL-PRF-38535 Class V

  • Seated Height-Max:

    5.92 mm

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Total Dose:

    300k Rad(Si) V

  • Width:

    15.24 mm

HS1-6664RH-Q Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the IC.
  • Implement a heat sink with a thermal resistance of ≤ 10°C/W, and ensure good airflow. Consider using a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K.
  • A 10 μF to 22 μF X7R or X5R ceramic capacitor is recommended, with a voltage rating of 10 V to 16 V, depending on the input voltage range.
  • Use a shielded enclosure, keep the input and output traces short, and add a common-mode choke or ferrite bead to the input lines. Ensure good grounding and decoupling.
  • The maximum allowed voltage drop is 1 V to 2 V, depending on the input voltage range and desired output voltage regulation.

Trust Checks

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Manufacturer Collaborated
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HS1-6664RH-Q Overview

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Part Image 5962F9562601QXX Renesas Electronics Corporation

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Part Image HS1-6664RH/PROTO Renesas Electronics Corporation

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For a full list of alternate parts for HS1-6664RH-Q, check out Findchips.com