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HS1-6664RH-8
Renesas Electronics
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1 | The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr | Ceramic Dual-In-Line Packages | HS1-6664RH-8 |
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HS1-6664RH-Q
Renesas Electronics
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1 | The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr | Ceramic Dual-In-Line Packages | HS1-6664RH-Q |
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HS1-6664RH-T
Renesas Electronics
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1 | The Intersil Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process and utilizes synchronous circui | Ceramic Dual-In-Line Packages | HS1-6664RH-T |
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HS1-6664RH/PROTO
Renesas Electronics
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1 | The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr | Ceramic Dual-In-Line Packages | HS1-6664RH/PROTO |
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74ALVCHS162830AGR
Texas Instruments
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1 | 1-Bit to 2-Bit Address Driver With 3-State Outputs | Small Outline Packages | 74ALVCHS162830AGR |
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SN74ALVCHS162830GR
Texas Instruments
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1 | 1-Bit to 2-Bit Address Driver With 3-State Outputs | Small Outline Packages | SN74ALVCHS162830GR |
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EMHS160ARA681MHA0G
Chemi-Con
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1 | 680 µF 16 V Aluminum Electrolytic Capacitors Radial, Can - SMD 190mOhm @ 100kHz 2000 Hrs @ 125°C | Capacitor Al Electrolytic | EMHS160ARA681MHA0G |
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THS-16-R
valcon
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1 | THS - Valcon 2.54mm Single Row Pin Header - Fast Stock | Header, Vertical | THS-16-R |
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74ALVCHS162830DFG
Renesas Electronics
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1 | Not recommended for new designs | Small Outline Packages | 74ALVCHS162830DFG |
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74ALVCHS162830DFG8
Renesas Electronics
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1 | Not recommended for new designs | Small Outline Packages | 74ALVCHS162830DFG8 |
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SSRH24NHS-16320
Yageo Group
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1 | Common Mode Choke. AC Line Filter. Wide Range Impedance Type. | Other | SSRH24NHS-16320 |
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EMHS160ARA202MKG5S
Chemi-Con
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1 | Aluminum Electrolytic Capacitors - SMD 2000uF 20% 16V AEC-Q200 | Capacitor Al Electrolytic | EMHS160ARA202MKG5S |
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EMHS160GRA202MKG5S
Chemi-Con
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1 | i.c | Capacitor Al Electrolytic | EMHS160GRA202MKG5S |
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NRVUHS160VT3G-GA01
onsemi
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1 | Ultrafast 35 Nanosecond Recovery Times• 175°C Operating Junction Temperature• High Temperature Glass Passivated Junction• High Voltage Capability to 600 V• NRVUHS and SURHS8 Prefixes for Automotive and OtherApplications Requiring Unique Site and Control ChangeRequirements; AEC−Q101 Qualified and PPAP Capable• These Devices are Pb−Free and are RoHS Compliant | Diodes Moulded | NRVUHS160VT3G-GA01 |
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74ALVCHS162830DF
Renesas Electronics
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1 | Not recommended for new designs | Small Outline Packages | 74ALVCHS162830DF |
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MURHS160T3G
onsemi
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1 | Ultrafast 35 ns Recovery Times; 175C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V0 @ 0.125 in; Weight: 95 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; Cathode Polarity Band; SUR Prefix for Automotive and Other Applications Requiring Unique Site | Diodes Moulded | MURHS160T3G |
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74ALVCHS162830DF8
Renesas Electronics
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1 | Not recommended for new designs | Small Outline Packages | 74ALVCHS162830DF8 |
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HS1625-3R8227-R
Eaton
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1 | Supercapacitors / Ultracapacitors .22F 3.8V ESR=100 | Capacitor, Polarized Radial Diameter | HS1625-3R8227-R |
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HS1-6616RH8
Intersil Corporation
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0 | HS1-6616RH8 | HS1-6616RH8 |
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HS1-6508RH
Intersil Corporation
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1 | Standard SRAM, 1KX1, 310ns, CMOS, CDIP16 | HS1-6508RH |
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HS1-65647RHH8
Intersil Corporation
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0 | Standard SRAM, 8KX8, 40ns, CMOS, CDIP28 | HS1-65647RHH8 |
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HS1-65643RHH8
Intersil Corporation
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0 | Standard SRAM, 64KX1, 40ns, CMOS, CDIP24 | HS1-65643RHH8 |
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HS1-65643RHH-8
Intersil Corporation
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1 | Standard SRAM, 64KX1, 40ns, CMOS, CDIP24 | HS1-65643RHH-8 |
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HS1-65647RHH-Q
Intersil Corporation
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0 | Standard SRAM, 8KX8, 40ns, CMOS, CDIP28 | HS1-65647RHH-Q |
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HS1-65142RH8
Intersil Corporation
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0 | Standard SRAM, 1KX4, CMOS, CDIP18 | HS1-65142RH8 |
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