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Image Part Number D.S Description Package Category Prices / Stock Model Action
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HS1-6664RH-8 Renesas Electronics
1 The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr Ceramic Dual-In-Line Packages HS1-6664RH-8 1 Download Model
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HS1-6664RH-Q Renesas Electronics
1 The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr Ceramic Dual-In-Line Packages HS1-6664RH-Q 1 Download Model
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HS1-6664RH-T Renesas Electronics
1 The Intersil Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process and utilizes synchronous circui Ceramic Dual-In-Line Packages HS1-6664RH-T 1 Download Model
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HS1-6664RH/PROTO Renesas Electronics
1 The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr Ceramic Dual-In-Line Packages HS1-6664RH/PROTO 1 Download Model
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74ALVCHS162830AGR Texas Instruments
1 1-Bit to 2-Bit Address Driver With 3-State Outputs Small Outline Packages 74ALVCHS162830AGR 1 Download Model
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SN74ALVCHS162830GR Texas Instruments
1 1-Bit to 2-Bit Address Driver With 3-State Outputs Small Outline Packages SN74ALVCHS162830GR 1 Download Model
Part Image Part Image 1 680 µF 16 V Aluminum Electrolytic Capacitors Radial, Can - SMD 190mOhm @ 100kHz 2000 Hrs @ 125°C Capacitor Al Electrolytic EMHS160ARA681MHA0G 1 Download Model
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THS-16-R valcon
1 THS - Valcon 2.54mm Single Row Pin Header - Fast Stock Header, Vertical THS-16-R 1 Download Model
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74ALVCHS162830DFG Renesas Electronics
1 Not recommended for new designs Small Outline Packages 74ALVCHS162830DFG 1 Download Model
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74ALVCHS162830DFG8 Renesas Electronics
1 Not recommended for new designs Small Outline Packages 74ALVCHS162830DFG8 1 Download Model
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SSRH24NHS-16320 Yageo Group
1 Common Mode Choke. AC Line Filter. Wide Range Impedance Type. Other SSRH24NHS-16320 1 Download Model
Part Image Part Image 1 Aluminum Electrolytic Capacitors - SMD 2000uF 20% 16V AEC-Q200 Capacitor Al Electrolytic EMHS160ARA202MKG5S 1 Download Model
Part Image Part Image 1 i.c Capacitor Al Electrolytic EMHS160GRA202MKG5S 1 Download Model
Part Image Part Image 1 Ultrafast 35 Nanosecond Recovery Times• 175°C Operating Junction Temperature• High Temperature Glass Passivated Junction• High Voltage Capability to 600 V• NRVUHS and SURHS8 Prefixes for Automotive and OtherApplications Requiring Unique Site and Control ChangeRequirements; AEC−Q101 Qualified and PPAP Capable• These Devices are Pb−Free and are RoHS Compliant Diodes Moulded NRVUHS160VT3G-GA01 1 Download Model
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74ALVCHS162830DF Renesas Electronics
1 Not recommended for new designs Small Outline Packages 74ALVCHS162830DF 1 Download Model
Part Image Part Image 1 Ultrafast 35 ns Recovery Times; 175C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V0 @ 0.125 in; Weight: 95 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; Cathode Polarity Band; SUR Prefix for Automotive and Other Applications Requiring Unique Site Diodes Moulded MURHS160T3G 1 Download Model
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74ALVCHS162830DF8 Renesas Electronics
1 Not recommended for new designs Small Outline Packages 74ALVCHS162830DF8 1 Download Model
Part Image Part Image 1 Supercapacitors / Ultracapacitors .22F 3.8V ESR=100 Capacitor, Polarized Radial Diameter HS1625-3R8227-R 1 Download Model
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HS1-6616RH8 Intersil Corporation
0 HS1-6616RH8 HS1-6616RH8 0 Build or Request
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HS1-6508RH Intersil Corporation
1 Standard SRAM, 1KX1, 310ns, CMOS, CDIP16 HS1-6508RH 0 Build or Request
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HS1-65647RHH8 Intersil Corporation
0 Standard SRAM, 8KX8, 40ns, CMOS, CDIP28 HS1-65647RHH8 0 Build or Request
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HS1-65643RHH8 Intersil Corporation
0 Standard SRAM, 64KX1, 40ns, CMOS, CDIP24 HS1-65643RHH8 0 Build or Request
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HS1-65643RHH-8 Intersil Corporation
1 Standard SRAM, 64KX1, 40ns, CMOS, CDIP24 HS1-65643RHH-8 0 Build or Request
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HS1-65647RHH-Q Intersil Corporation
0 Standard SRAM, 8KX8, 40ns, CMOS, CDIP28 HS1-65647RHH-Q 0 Build or Request
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HS1-65142RH8 Intersil Corporation
0 Standard SRAM, 1KX4, CMOS, CDIP18 HS1-65142RH8 0 Build or Request
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