HS8K1TB - ROHM Semiconductor

HS8K1TB Details

• Manufacturer Part Number:

  HS8K1TB

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  5.4

• Avalanche Energy Rating (Eas):

  7.6 mJ

• Case Connection:

  DRAIN SOURCE

• Configuration:

  COMPLEX

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  10 A

• Drain-source On Resistance-Max:

  0.02 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-PDSO-N8

• Moisture Sensitivity Level:

  1

• Number of Elements:

  2

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  40 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON